List of top Electronics Questions asked in GATE PH

Let $ p(\bar{p}, \bar{q}, t) $ be the phase space density of an ensemble of a system. The Hamiltonian of the system is $ H(p, q) $. If $ \{A, B\} $ denotes the Poisson bracket of $ A $ and $ B $, then $ \frac{dp}{dt} = 0 $ implies

Consider the operational amplifier circuit shown in figure.

The output voltage V。 is ____ V (in integer).

In a parallel plate capacitor, the plate at $ x = 0 $ is grounded and the plate at $ x = d $ is maintained at a potential $ V_0 $. The space between the two plates is filled with a linear dielectric of permittivity $ \epsilon = \epsilon_0 \left(1 + \frac{x}{d}\right) $, where $ \epsilon_0 $ is the permittivity of free space. Neglecting the edge effects, the electric field ($\vec{E}$) inside the capacitor is .

The vapor pressure (P) of solid ammonia is given by $ \ln(P) = 23.03 - \frac{3754}{T} $, while that of liquid ammonia is given by $ \ln(P) = 19.49 - \frac{3063}{T} $, where $ T $ is the temperature in K. The temperature of the triple point of ammonia is ________ K (rounded off to two decimal places).

The minimum number of basic logic gates required to realize the Boolean expression $ B \cdot (A + B) + A \cdot (B + A) $ is ____ (in integer).

The temperature dependence of the electrical conductivity (σ) of three intrinsic semiconductors A, B and C is shown in figure

Let $E_A, E_B$ and $E_C$ be the bandgaps of A, B and C, respectively. Which one of the following relations is correct?

Let $N_e$ and $T_e$, respectively, denote number and kinetic energy of electrons produced in a nuclear beta decay. Which one of the following distributions is correct?

Consider the following circuit:

Suppose the input signal P is

and the input signal Q is

Which one of the following output signals is correct?

The symbols C, D, $ V_{in} $, and $ V_{o} $ shown in the figure denote capacitor, ideal diode, input voltage, and output voltage, respectively.

Which one of the following output waveforms ($ V_{o} $) is correct for the given input waveform ($ V_{in} $)?

The above combination of logic gates represents the operation

As shown in the figure, two metal-semiconductor junctions are formed between an n-type semiconductor S and metal M. The work functions of S and M are $\phi_S$ and $\phi_M$, respectively, with $\phi_M > \phi_S$. The I-V characteristics (on linear scale) of the junctions is best represented by

In a semiconductor, the ratio of the effective mass of hole to electron is 2:11 and the ratio of average relaxation time for hole to electron is 1:2. The ratio of the mobility of the hole to electron is

The donor concentration in a sample of n-type silicon is increased by a factor of 100. Assuming the sample to be non-degenerate, the shift in the Fermi level (in meV) at 300 K (rounded off to the nearest integer) is $\underline{\hspace{2cm}}$.
\text{(Given: } k_B T = 25 \, \text{meV at 300 K).}